Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF

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Subtotal (1 pack of 2 units)*

SGD6.85

(exc. GST)

SGD7.466

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD3.425SGD6.85
10 - 48SGD2.945SGD5.89
50 - 98SGD2.88SGD5.76
100 - 248SGD2.455SGD4.91
250 +SGD2.345SGD4.69

*price indicative

Packaging Options:
RS Stock No.:
257-9274
Mfr. Part No.:
IRF1404STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

HEXFET

Maximum Drain Source Resistance Rds

4mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

200W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Distrelec Product Id

304-40-515

Automotive Standard

No

The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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