Infineon HEXFET N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF
- RS Stock No.:
- 257-9274
- Distrelec Article No.:
- 304-40-515
- Mfr. Part No.:
- IRF1404STRLPBF
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
SGD6.85
(exc. GST)
SGD7.47
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 722 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD3.425 | SGD6.85 |
| 10 - 48 | SGD2.945 | SGD5.89 |
| 50 - 98 | SGD2.88 | SGD5.76 |
| 100 - 248 | SGD2.455 | SGD4.91 |
| 250 + | SGD2.345 | SGD4.69 |
*price indicative
- RS Stock No.:
- 257-9274
- Distrelec Article No.:
- 304-40-515
- Mfr. Part No.:
- IRF1404STRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Related links
- Infineon HEXFET N-Channel MOSFET 40 V TO-263
- Infineon HEXFET N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL
- Infineon HEXFET N-Channel MOSFET 100 V TO-263
- Infineon HEXFET N-Channel MOSFET 150 V TO-263
- Infineon HEXFET N-Channel MOSFET 60 V TO-263
- Infineon HEXFET N-Channel MOSFET 55 V TO-263
- Infineon HEXFET N-Channel MOSFET 100 V TO-263
