Vishay Type N-Channel MOSFET, 24 A, 650 V TO-263 SIHB24N65E-GE3
- RS Stock No.:
- 256-7413
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
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SGD8.19
(exc. GST)
SGD8.93
(inc. GST)
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In Stock
- 979 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | SGD8.19 |
| 10 - 24 | SGD7.36 |
| 25 - 99 | SGD6.98 |
| 100 - 499 | SGD6.13 |
| 500 + | SGD5.28 |
*price indicative
- RS Stock No.:
- 256-7413
- Mfr. Part No.:
- SIHB24N65E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor E series power mosfet have low figure of merit (FOM) Ron x Qg and low input capacitance (Ciss).
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
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- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3