Vishay E N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

RS Stock No.:: 239-8637
Mfr. Part No.:: SIHK125N60E-T1-GE3
Manufacturer:: Vishay

Vishay E N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

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RS Stock No.:: 239-8637
Mfr. Part No.:: SIHK125N60E-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.109Ω
	Channel Mode	Depletion
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	132W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	54nC
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.109Ω
	Channel Mode Depletion
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 132W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 54nC
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SIHK125N60E-T1-GE3

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3

This power MOSFET is a high-voltage N-channel switch designed for demanding power-conversion and automotive environments. It operates across an extended ambient range and is supplied in a compact surface-mount PowerPAK 10x12 package suited to dense board layouts. The device supports robust gate drive conditions and is manufactured to meet industry lead-free environmental requirements.

Features and Benefits:

• 650V drain capability enabling high-voltage system designs
• 21A continuous drain current supporting substantial load currents
• Low Rds(on) 0.109Ω reducing conduction losses in power stages
• 132W power dissipation allowing higher thermal headroom
• Gate tolerance up to 30V permitting aggressive drive schemes
• Typical gate charge 54nC for fast switching transitions

Applications

• Suitable for high-voltage DC-DC converters in industrial systems
• Ideal for on-board automotive power distribution modules
• Used with motor-drive stages requiring high-voltage switching
• Can be used for power supplies in telecommunications equipment
• Suitable for half-bridge and synchronous-rectifier implementations

What thermal conditions can it withstand in harsh environments?

It is specified to operate between -55°C and +150°C, enabling use across extreme temperature ranges found in automotive and industrial settings.

How does the package influence mounting and assembly?

The PowerPAK 10x12 surface-mount format offers a low-profile footprint that facilitates automated placement and efficient PCB real-estate usage.

Is this device suitable for automotive qualification workflows?

It complies with the AEC-Q101 automotive standard, making it appropriate for vehicle electronics that require component-level automotive qualification.

What conduction and switching trade-offs should designers expect?

Expect a balance between moderate gate charge and low Rds(on), providing reduced conduction loss while maintaining reasonably fast switching for many power-electronics topologies.