Vishay E Type N-Channel MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3

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Subtotal (1 pack of 2 units)*

SGD17.05

(exc. GST)

SGD18.584

(inc. GST)

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Units
Per unit
Per Pack*
2 - 48SGD8.525SGD17.05
50 - 98SGD7.23SGD14.46
100 - 248SGD6.28SGD12.56
250 - 998SGD6.155SGD12.31
1000 +SGD4.56SGD9.12

*price indicative

Packaging Options:
RS Stock No.:
239-8638
Mfr. Part No.:
SIHK125N60E-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.11Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

132W

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay E series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.

4th generation E series technology

Low effective capacitance

Low switching and conduction losses

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