Vishay E Type N-Channel Power MOSFET, 21 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3
- RS Stock No.:
- 239-8638
- Mfr. Part No.:
- SIHK125N60E-T1-GE3
- Manufacturer:
- Vishay
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SGD17.05
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SGD18.584
(inc. GST)
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In Stock
- Plus 2,050 unit(s) shipping from 22 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | SGD8.525 | SGD17.05 |
| 50 - 98 | SGD7.23 | SGD14.46 |
| 100 - 248 | SGD6.28 | SGD12.56 |
| 250 - 998 | SGD6.155 | SGD12.31 |
| 1000 + | SGD4.56 | SGD9.12 |
*price indicative
- RS Stock No.:
- 239-8638
- Mfr. Part No.:
- SIHK125N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.109Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 132W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.109Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 132W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 21A Continuous Drain Current - SIHK125N60E-T1-GE3
This power MOSFET is a high-voltage N-channel transistor designed for demanding electronic and automotive applications. It functions as a depletion-mode switch to control high-voltage circuits and is suitable for surface-mount assembly in systems requiring robust thermal and electrical performance. The device operates across a wide temperature range and conforms to automotive quality standards for use in vehicle electronics.
Features and Benefits:
• 650V drain voltage enabling high-voltage system switching • 21A continuous drain current for sustained load handling • 0.109Ω Rds(on) for reduced conduction losses • 132W power dissipation supporting elevated thermal loads • 54nC typical gate charge allowing predictable switching energy • ±30V gate tolerance for robust gate-drive margin
Applications
• Suitable for automotive power conversion and inverter stages • Ideal for high-voltage motor drive front-ends • Used for industrial automation high-voltage switching • Can be used for power supplies in electrical systems
What operating temperature range can I expect for reliability?
The device supports continuous operation from -55°C up to +150°C allowing use in environments with wide thermal variation.
How does the package influence thermal performance on a PCB?
The surface-mount PowerPAK 10x12 package provides a low thermal resistance path to the board, aiding heat transfer when soldered to appropriate PCB copper areas.
What gate-drive considerations should I allow for switching?
With a typical gate charge of 54nC and a maximum gate-source rating of ±30V, gate drivers must supply sufficient charge and respect the voltage limit to control switching speed safely.
Are there industry standards applicable to this component?
The device meets AEC-Q101 requirements and is RoHS-compliant, aligning it with automotive-grade component selection criteria.
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