Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3
- RS Stock No.:
- 252-0264
- Mfr. Part No.:
- SIHK055N60EF-T1GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD12.90
(exc. GST)
SGD14.06
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,050 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 49 | SGD12.90 |
| 50 - 99 | SGD10.32 |
| 100 - 249 | SGD9.88 |
| 250 - 999 | SGD9.67 |
| 1000 + | SGD9.02 |
*price indicative
- RS Stock No.:
- 252-0264
- Mfr. Part No.:
- SIHK055N60EF-T1GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05mΩ | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 236W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05mΩ | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 236W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Width 5.15mm | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 40A Maximum Continuous Drain Current - SIHK055N60EF-T1GE3
This power MOSFET is a high-voltage, N‑channel device designed for demanding power-conversion and automotive applications. It operates across a wide temperature range and is intended for surface-mount deployment where robust switching, high voltage tolerance and automotive qualification are required.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 40A continuous current supports substantial load currents • 0.05mΩ Rds(on) minimises conduction losses during operation • 236W power dissipation allows high thermal throughput • 90nC typical gate charge reduces switching energy per transition • AEC-Q101 qualification meets automotive stress and reliability needs
Applications
• Suitable for traction inverter stages in automotive electronics • Ideal for high-voltage DC-DC converters in industrial automation • Used for switch-mode power supplies in power distribution systems • Can be used for motor-drive stages requiring high current capacity • Suitable for Compact surface-mounted power modules
What gate-drive considerations are required for efficient switching?
Drive circuits should accommodate up to ±20V gate excursion and supply sufficient Peak current to charge the 90nC gate to the chosen Vgs for the defined switching speed while managing switching losses.
How does thermal management affect continuous operation?
To sustain the 236W dissipation, thermal pathways such as large copper planes or heatsinking to the PowerPAK substrate are necessary to keep junction temperatures within the specified +150°C limit.
What mounting and layout practices improve performance?
Use low-inductance surface-mount layouts with short, wide tracks for drain and source, and place gate resistors and decoupling close to the pins to reduce ringing and electromagnetic interference.
What environmental range can be expected for field use?
The device is specified for operation from -55°C up to +150°C, supporting a broad span of ambient and elevated junction conditions in industrial and automotive environments.
Related links
- Vishay Type N-Channel MOSFET & Diode 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay Type N-Channel MOSFET & Diode 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay Type N-Channel MOSFET & Diode 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK185N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK125N60E-T1-GE3