Infineon BSS Type P-Channel MOSFET, 0.23 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD2.52

(exc. GST)

SGD2.75

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 16,940 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 10SGD0.252SGD2.52
20 - 90SGD0.227SGD2.27
100 - 240SGD0.204SGD2.04
250 - 490SGD0.186SGD1.86
500 +SGD0.166SGD1.66

*price indicative

Packaging Options:
RS Stock No.:
250-0556
Mfr. Part No.:
BSS306NH6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.23A

Maximum Drain Source Voltage Vds

30V

Series

BSS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Distrelec Product Id

304-40-501

The Infineon makes N-channel Enhancement mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS 2, Small-Signal-Transistor. The logic level (4.5V rated) and Avalanche rated. It is 100% lead-free and Halogen free.

N-channel, Enhancement mode

Logic level 4.5V rated

Maximum power dissipation is 500mW

Related links