DiodesZetex 2 N-Channel MOSFET, 800 mA, 20 V Enhancement, 6-Pin SOT-363 DMN2710UDW-7
- RS Stock No.:
- 246-7513
- Mfr. Part No.:
- DMN2710UDW-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
SGD6.53
(exc. GST)
SGD7.10
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,400 unit(s) shipping from 26 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.261 | SGD6.53 |
| 50 - 75 | SGD0.234 | SGD5.85 |
| 100 - 225 | SGD0.211 | SGD5.28 |
| 250 - 975 | SGD0.19 | SGD4.75 |
| 1000 + | SGD0.172 | SGD4.30 |
*price indicative
- RS Stock No.:
- 246-7513
- Mfr. Part No.:
- DMN2710UDW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.36W | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.36W | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±6 V It offers a ultra-small package size It has low input/output leakage
Related links
- DiodesZetex 2 N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 DMN2710UDW-7
- DiodesZetex Dual DMN3401 2 N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 DMN3401LDW-7
- DiodesZetex Dual DMC2710 2 Type P 800 mA 6-Pin SOT-563 DMC2710UV-7
- DiodesZetex Dual DMC3401 2 Type N 800 mA 6-Pin SOT-363 DMC3401LDW-7
- DiodesZetex Dual DMC2710 2 Type P 800 mA 6-Pin SOT-563
- DiodesZetex Dual DMN N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- DiodesZetex Dual DMN N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 DMN3401LDWQ-7
- Vishay Dual TrenchFET 2 N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 SQ1922AEEH-T1_GE3