DiodesZetex Dual DMN3401 2 Type N-Channel MOSFET, 800 mA, 30 V Enhancement, 6-Pin SOT-363
- RS Stock No.:
- 206-0085
- Mfr. Part No.:
- DMN3401LDW-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD13.70
(exc. GST)
SGD14.95
(inc. GST)
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In Stock
- Plus 1,900 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.274 | SGD13.70 |
| 100 - 200 | SGD0.264 | SGD13.20 |
| 250 - 450 | SGD0.251 | SGD12.55 |
| 500 - 950 | SGD0.238 | SGD11.90 |
| 1000 + | SGD0.226 | SGD11.30 |
*price indicative
- RS Stock No.:
- 206-0085
- Mfr. Part No.:
- DMN3401LDW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN3401 | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 0.35W | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.15mm | |
| Height | 0.95mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN3401 | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 0.35W | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.15mm | ||
Height 0.95mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 0.29 W thermal power dissipation.
Low on-resistance
Low input capacitance
Related links
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- DiodesZetex Dual DMN Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
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