Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223
- RS Stock No.:
- 244-2270
- Mfr. Part No.:
- IPN60R600PFD7SATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD1,347.00
(exc. GST)
SGD1,467.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 19 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.449 | SGD1,347.00 |
| 6000 - 6000 | SGD0.404 | SGD1,212.00 |
| 9000 + | SGD0.364 | SGD1,092.00 |
*price indicative
- RS Stock No.:
- 244-2270
- Mfr. Part No.:
- IPN60R600PFD7SATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223 | |
| Series | IPN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223 | ||
Series IPN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss, excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Enables high power density designs and small form factors
Enables efficiency gains at higher switching frequencies
Excellent commutation ruggedness
Easy to select the right parts and optimize the design
Related links
- Infineon IPN Type N-Channel MOSFET 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
- Infineon IPN Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 75 V, 3-Pin SOT-223
