Infineon IPN Type N-Channel MOSFET, 6 A, 600 V, 3-Pin SOT-223 IPN60R600PFD7SATMA1
- RS Stock No.:
- 244-2271
- Mfr. Part No.:
- IPN60R600PFD7SATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD3.83
(exc. GST)
SGD4.175
(inc. GST)
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In Stock
- 1,415 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD0.766 | SGD3.83 |
| 10 - 95 | SGD0.728 | SGD3.64 |
| 100 - 245 | SGD0.69 | SGD3.45 |
| 250 - 495 | SGD0.656 | SGD3.28 |
| 500 + | SGD0.624 | SGD3.12 |
*price indicative
- RS Stock No.:
- 244-2271
- Mfr. Part No.:
- IPN60R600PFD7SATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R2K0PFD7S) complements the CoolMOS™ 7 offering for consumer applications.This product family is tailored to ultrahigh power density as well as highest efficiency designs.
Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss
Low switching losses Eoss, excellent thermal behavior
Fast body diode
Wide range portfolio of RDS(on) and package variations
Enables high power density designs and small form factors
Enables efficiency gains at higher switching frequencies
Excellent commutation ruggedness
Easy to select the right parts and optimize the design
Related links
- Infineon IPN Type N-Channel MOSFET 600 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-223 IPN60R360P7SATMA1
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 650 V, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon IPN Type N-Channel MOSFET 75 V, 3-Pin SOT-223