Infineon IAUC Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L014ATMA1
- RS Stock No.:
- 241-9685
- Mfr. Part No.:
- IAUC100N04S6L014ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD11.84
(exc. GST)
SGD12.905
(inc. GST)
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In Stock
- Plus 1,145 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD2.368 | SGD11.84 |
| 10 - 95 | SGD2.272 | SGD11.36 |
| 100 - 245 | SGD2.178 | SGD10.89 |
| 250 - 495 | SGD2.082 | SGD10.41 |
| 500 + | SGD1.988 | SGD9.94 |
*price indicative
- RS Stock No.:
- 241-9685
- Mfr. Part No.:
- IAUC100N04S6L014ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IAUC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series IAUC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ 6 N-channel automotive MOSFET has 40 V drain source voltage (VDS) & 100 A drain current (ID). It has MOS technology in the 5x6 mm² SS08 leadless package with highest quality level and robustness for automotive applications.
OptiMOS™ - power MOSFET for automotive applications
N-channel - Enhancement mode - Logic Level
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Related links
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