Infineon IAUC N-Channel MOSFET, 80 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6L032ATMA1
- RS Stock No.:
- 249-6896
- Mfr. Part No.:
- IAUC80N04S6L032ATMA1
- Manufacturer:
- Infineon
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SGD7.50
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SGD8.20
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD1.50 | SGD7.50 |
| 10 - 95 | SGD1.348 | SGD6.74 |
| 100 - 245 | SGD1.214 | SGD6.07 |
| 250 - 495 | SGD1.092 | SGD5.46 |
| 500 + | SGD0.98 | SGD4.90 |
*price indicative
- RS Stock No.:
- 249-6896
- Mfr. Part No.:
- IAUC80N04S6L032ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUC Series MOSFET, 40V Maximum Drain‑Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6L032ATMA1
This MOSFET is an N‑channel enhancement device designed for high‑current switching and power management in demanding environments. It operates across an extended temperature range and is intended for surface‑mount applications where Compact power handling is required. The device conforms to automotive test standards and environmental restrictions, making it suitable for systems that require robust thermal tolerance and regulated material composition.
Features and Benefits:
• 3.20mΩ Rds delivers low conduction losses for efficient power transfer
• 80A continuous drain current supports substantial load currents
• 81W power dissipation allows sustained high‑power operation
• 80nC typical gate charge enables controlled switching performance
• 20V gate‑source tolerance protects against high gate excursions
• 80A continuous drain current supports substantial load currents
• 81W power dissipation allows sustained high‑power operation
• 80nC typical gate charge enables controlled switching performance
• 20V gate‑source tolerance protects against high gate excursions
Applications
• Suitable for DC‑DC converter outputs in automotive power systems
• Ideal for high‑current motor driver stages in vehicles
• Used with power distribution modules requiring surface mounting
• Can be used for battery management and charging circuits
• Appropriate for thermally stressed environments up to high temperatures
• Ideal for high‑current motor driver stages in vehicles
• Used with power distribution modules requiring surface mounting
• Can be used for battery management and charging circuits
• Appropriate for thermally stressed environments up to high temperatures
What package type does it use for assembly on boards?
It is supplied in a SuperSO8 5 x 6 package intended for surface‑mount placement.
What temperature extremes can it withstand in operation?
It is specified to operate from -55°C up to 175°C for wide thermal‑range applications.
How does it meet automotive qualification requirements?
It fulfils the AEC‑Q101 automotive standard for component stress screening.
Is the device compliant with environmental material restrictions?
It conforms to RoHS requirements restricting certain hazardous substances.
What is the maximum allowed gate‑source voltage during use?
The device permits up to 20V between gate and source.
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