Infineon AUIRF Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 229-1728
- Mfr. Part No.:
- AUIRF3205ZSTRL
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 800 units)*
SGD1,398.40
(exc. GST)
SGD1,524.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 20 April 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | SGD1.748 | SGD1,398.40 |
| 1600 - 1600 | SGD1.718 | SGD1,374.40 |
| 2400 - 4000 | SGD1.673 | SGD1,338.40 |
| 4800 - 8800 | SGD1.586 | SGD1,268.80 |
| 9600 + | SGD1.42 | SGD1,136.00 |
*price indicative
- RS Stock No.:
- 229-1728
- Mfr. Part No.:
- AUIRF3205ZSTRL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | AUIRF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 76nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series AUIRF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 76nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications.
It is RoHS compliant and AEC Q101 qualified
Related links
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