Vishay E N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3

RS Stock No.:: 228-2975
Mfr. Part No.:: SQW33N65EF-GE3
Manufacturer:: Vishay

Vishay E N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3

This image is representative of the product range

Bulk discount available

View bulk pricing options

Subtotal (1 pack of 2 units)*

SGD19.88

(exc. GST)

SGD21.66

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Pack*
2 - 8	SGD9.94	SGD19.88
10 - 24	SGD9.635	SGD19.27
26 - 98	SGD9.26	SGD18.52
100 - 498	SGD8.79	SGD17.58
500 +	SGD8.265	SGD16.53

*price indicative

RS Stock No.:: 228-2975
Mfr. Part No.:: SQW33N65EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	700V
	Series	E
	Package Type	TO-247AD
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	109mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	115nC
	Forward Voltage Vf	900mV
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 700V
	Series E
	Package Type TO-247AD
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 109mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 115nC
	Forward Voltage Vf 900mV
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SQW33N65EF-GE3

Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Continuous Drain Current - SQW33N65EF-GE3

This power MOSFET is a high-voltage N-channel transistor designed for demanding power conversion and control roles. It operates across a wide ambient range and is supplied in a through-hole package suitable for heatsinking and robust mounting in industrial or automotive contexts. The device supports enhancement-mode switching for efficient high-voltage applications and is RoHS-compliant.

Features and Benefits:

• 700V drain capability enables high-voltage system design
• 34A continuous current handles substantial load currents
• 109mΩ Rds(on) reduces conduction losses during operation
• 375W power dissipation supports high-power switching cycles
• 115nC typical gate charge enables predictable gate-drive sizing
• 30V gate tolerance allows common gate-driver selection

Applications

• Suitable for high-voltage motor-drive stages
• Ideal for front-end power-factor correction circuits
• Used with switching supplies in renewable-energy inverters
• Can be used for automotive traction inverters requiring AEC-Q101
• Appropriate for industrial welding and plasma-power modules

What thermal range can it withstand in harsh installations?

It is rated to operate from -55°C up to 175°C, allowing use in both cold-start and high-heat environments.

Which package facilitates mounting and heat removal?

The TO-247AD through-hole package permits secure bolting to a heatsink for improved thermal management.

How does the channel type affect switching behaviour?

The N-channel enhancement-mode structure provides normally-off operation and efficient conduction when driven above the gate threshold.

Is it suitable for automotive qualification requirements?

It meets AEC-Q101 standards, making it appropriate for many vehicle electronics power stages.