Vishay EF Type N-Channel Power MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- RS Stock No.:
- 268-8297
- Mfr. Part No.:
- SIHG085N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD10.02
(exc. GST)
SGD10.92
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 499 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | SGD10.02 |
| 5 - 9 | SGD9.82 |
| 10 - 99 | SGD9.00 |
| 100 - 499 | SGD7.38 |
| 500 + | SGD6.29 |
*price indicative
- RS Stock No.:
- 268-8297
- Mfr. Part No.:
- SIHG085N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHG085N60EF-GE3
This power MOSFET is a high-voltage N-channel device designed for switching and control tasks in industrial and electronic systems. It operates in enhancement mode and is supplied in a through-hole TO-247 package suited to assemblies requiring robust mounting and thermal handling. The device targets applications where elevated blocking voltage and substantial continuous current capability are required.
Features and Benefits:
• 650V maximum drain-source voltage enables high-voltage switching
• 34A continuous drain current supports heavy load handling
• Low Rds(on) 0.084Ω reduces conduction losses
• 184W power dissipation allows higher power operation
• 63nC typical gate charge aids fast switching in SMPS
• Maximum operating temperature 150°C sustains hot environments
• 34A continuous drain current supports heavy load handling
• Low Rds(on) 0.084Ω reduces conduction losses
• 184W power dissipation allows higher power operation
• 63nC typical gate charge aids fast switching in SMPS
• Maximum operating temperature 150°C sustains hot environments
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable energy inverters
• Can be used for high-voltage Pulse and inverter circuits
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable energy inverters
• Can be used for high-voltage Pulse and inverter circuits
What gate-drive considerations are required for this device?
Gate drive must accommodate a maximum gate-source rating of 30V and manage a typical gate charge of 63nC to achieve the desired switching speed while limiting transient overshoot.
How should thermal management be approached in demanding installations?
With a 184W power dissipation rating, use an appropriately sized heatsink and thermal mounting in the TO-247 through-hole format to keep junction temperatures within the device’s limits.
Are there environmental operating limits for rugged deployments?
The device is specified to operate down to -55°C and up to 150°C, enabling use across a wide temperature range common in industrial settings.
What electrical stress limits must designers observe?
Designers should respect the 650V drain-source maximum and ensure transient protection for voltage spikes that could exceed this rating.
Related links
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC
- Vishay SIHG Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay SIHG Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay SIHB Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay D Series Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-247AC SIHG25N40D-GE3
- Vishay SiHG32N50D Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247AC SiHG32N50D-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG026N65E-GE3