Vishay E N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3

RS Stock No.:: 228-2974
Mfr. Part No.:: SQW33N65EF-GE3
Manufacturer:: Vishay

Vishay E N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3

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Subtotal (1 tube of 30 units)*

SGD201.60

(exc. GST)

SGD219.60

(inc. GST)

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Units	Per unit	Per Tube*
30 - 90	SGD6.72	SGD201.60
120 - 480	SGD6.676	SGD200.28
510 - 990	SGD6.492	SGD194.76
1020 - 2010	SGD6.132	SGD183.96
2040 +	SGD5.454	SGD163.62

*price indicative

RS Stock No.:: 228-2974
Mfr. Part No.:: SQW33N65EF-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	700V
	Package Type	TO-247AD
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	109mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	115nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 700V
	Package Type TO-247AD
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 109mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 115nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Forward Voltage Vf 900mV
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SQW33N65EF-GE3

Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Continuous Drain Current - SQW33N65EF-GE3

This power MOSFET is a high-voltage N-channel transistor designed for demanding power conversion and control roles. It operates across a wide ambient range and is supplied in a through-hole package suitable for heatsinking and robust mounting in industrial or automotive contexts. The device supports enhancement-mode switching for efficient high-voltage applications and is RoHS-compliant.

Features and Benefits:

• 700V drain capability enables high-voltage system design
• 34A continuous current handles substantial load currents
• 109mΩ Rds(on) reduces conduction losses during operation
• 375W power dissipation supports high-power switching cycles
• 115nC typical gate charge enables predictable gate-drive sizing
• 30V gate tolerance allows common gate-driver selection

Applications

• Suitable for high-voltage motor-drive stages
• Ideal for front-end power-factor correction circuits
• Used with switching supplies in renewable-energy inverters
• Can be used for automotive traction inverters requiring AEC-Q101
• Appropriate for industrial welding and plasma-power modules

What thermal range can it withstand in harsh installations?

It is rated to operate from -55°C up to 175°C, allowing use in both cold-start and high-heat environments.

Which package facilitates mounting and heat removal?

The TO-247AD through-hole package permits secure bolting to a heatsink for improved thermal management.

How does the channel type affect switching behaviour?

The N-channel enhancement-mode structure provides normally-off operation and efficient conduction when driven above the gate threshold.

Is it suitable for automotive qualification requirements?

It meets AEC-Q101 standards, making it appropriate for many vehicle electronics power stages.