Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1

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Subtotal (1 pack of 2 units)*

SGD15.19

(exc. GST)

SGD16.558

(inc. GST)

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Per unit
Per Pack*
2 - 8SGD7.595SGD15.19
10 - 98SGD6.965SGD13.93
100 - 248SGD6.42SGD12.84
250 - 498SGD5.965SGD11.93
500 +SGD5.795SGD11.59

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Packaging Options:
RS Stock No.:
222-4851
Mfr. Part No.:
IMBF170R650M1XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.4A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO-263

Series

IMBF1

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm

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