Infineon IMBF1 Type N-Channel MOSFET, 7.4 A, 1700 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 1000 units)*

SGD3,933.00

(exc. GST)

SGD4,287.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 1000SGD3.933SGD3,933.00
2000 - 2000SGD3.782SGD3,782.00
3000 +SGD3.734SGD3,734.00

*price indicative

RS Stock No.:
222-4850
Mfr. Part No.:
IMBF170R650M1XTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.4A

Maximum Drain Source Voltage Vds

1700V

Package Type

TO-263

Series

IMBF1

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm

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