Infineon CoolMOS Type N-Channel MOSFET, 76 A, 600 V Enhancement, 4-Pin TO-247
- RS Stock No.:
- 222-4730
- Mfr. Part No.:
- IPZA60R037P7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD261.36
(exc. GST)
SGD284.88
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 90 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD8.712 | SGD261.36 |
| 90 - 120 | SGD8.575 | SGD257.25 |
| 150 - 270 | SGD8.349 | SGD250.47 |
| 300 - 570 | SGD7.91 | SGD237.30 |
| 600 + | SGD7.077 | SGD212.31 |
*price indicative
- RS Stock No.:
- 222-4730
- Mfr. Part No.:
- IPZA60R037P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 21.1mm | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 21.1mm | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products
Related links
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