Infineon CoolMOS N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- RS Stock No.:
- 222-4729
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (2 units, in packs of 2)*
SGD28.00
(exc. GST)
SGD30.52
(inc. GST)
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In Stock
- Plus 318 unit(s) shipping from 05 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD14.00 | SGD28.00 |
| 10 - 98 | SGD12.85 | SGD25.70 |
| 100 - 248 | SGD11.85 | SGD23.70 |
| 250 - 498 | SGD10.985 | SGD21.97 |
| 500 + | SGD10.70 | SGD21.40 |
*price indicative
- RS Stock No.:
- 222-4729
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 171W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Width | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 171W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Width 5.21mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Pb-free plating, halogen free mold compound
Related links
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 IPW65R048CFDAFKSA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220