Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 7 A, 800 V Enhancement, 3-Pin TO-251 IPS80R750P7AKMA1
- RS Stock No.:
- 220-7441
- Mfr. Part No.:
- IPS80R750P7AKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD16.53
(exc. GST)
SGD18.02
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 08 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.653 | SGD16.53 |
| 20 - 90 | SGD1.517 | SGD15.17 |
| 100 - 240 | SGD1.401 | SGD14.01 |
| 250 - 490 | SGD1.298 | SGD12.98 |
| 500 + | SGD1.264 | SGD12.64 |
*price indicative
- RS Stock No.:
- 220-7441
- Mfr. Part No.:
- IPS80R750P7AKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-251 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 51W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-251 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 51W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class FOM R DS(on) * E oss; reduced Qg, C is and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)the of 3V and smallest V (GS)the variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to Cool MOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-251 IPU80R750P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-251 IPSA70R1K2P7SAKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1