Infineon CoolMOS P7 N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

RS Stock No.:: 220-7444
Mfr. Part No.:: IPSA70R2K0P7SAKMA1
Manufacturer:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

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Subtotal (1 tube of 75 units)*

SGD56.55

(exc. GST)

SGD61.65

(inc. GST)

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Units	Per unit	Per Tube*
75 - 150	SGD0.754	SGD56.55
225 - 300	SGD0.742	SGD55.65
375 - 675	SGD0.722	SGD54.15
750 - 1425	SGD0.684	SGD51.30
1500 +	SGD0.612	SGD45.90

*price indicative

RS Stock No.:: 220-7444
Mfr. Part No.:: IPSA70R2K0P7SAKMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	N
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	700V
	Series	CoolMOS P7
	Package Type	TO-251
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	17.6W
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	16V
	Typical Gate Charge Qg @ Vgs	3.8nC
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	150°C
	Length	6.6mm
	Standards/Approvals	No
	Width	2.38mm
	Height	6.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type N
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 700V
	Series CoolMOS P7
	Package Type TO-251
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 17.6W
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 16V
	Typical Gate Charge Qg @ Vgs 3.8nC
	Forward Voltage Vf 900mV
	Maximum Operating Temperature 150°C
	Length 6.6mm
	Standards/Approvals No
	Width 2.38mm
	Height 6.1mm
	Automotive Standard No

Datasheet - IPSA70R2K0P7SAKMA1

The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.

Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss

Excellent thermal behavior

Integrated ESD protection diode

Low switching losses(Eoss)

Product validationa cc.JEDEC Standard

Cost competitive technology

Lower temperature

High ES Druggedness

Enables efficiency gainsat higher switching frequencies

Enableshighpowerdensitydesignsandsmallformfactors

Infineon CoolMOS P7 N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251 IPSA70R2K0P7SAKMA1

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