Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 5.7 A, 700 V Enhancement, 3-Pin TO-251
- RS Stock No.:
- 220-7444
- Mfr. Part No.:
- IPSA70R2K0P7SAKMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 75 units)*
SGD33.45
(exc. GST)
SGD36.45
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 1,200 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 150 | SGD0.446 | SGD33.45 |
| 225 - 300 | SGD0.439 | SGD32.93 |
| 375 - 675 | SGD0.427 | SGD32.03 |
| 750 - 1425 | SGD0.405 | SGD30.38 |
| 1500 + | SGD0.362 | SGD27.15 |
*price indicative
- RS Stock No.:
- 220-7444
- Mfr. Part No.:
- IPSA70R2K0P7SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 17.6W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 6.1mm | |
| Width | 2.38 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 17.6W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 6.1mm | ||
Width 2.38 mm | ||
Automotive Standard No | ||
The Infineon Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS P7 is an optimized platform tailored to target cost sensitive application in consumer market such as charger, adapter, lighting, TV, etc. The new series provides all the benefits of a fast switching super junction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
Extremely low losses due rcovery low FOMRDS(on)*Qgand RDS(on)*Eoss
Excellent thermal behavior
Integrated ESD protection diode
Low switching losses(Eoss)
Product validationa cc.JEDEC Standard
Cost competitive technology
Lower temperature
High ES Druggedness
Enables efficiency gainsat higher switching frequencies
Enableshighpowerdensitydesignsandsmallformfactors
Related links
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