Infineon CoolMOS P7 Type N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1
- RS Stock No.:
- 219-5995
- Mfr. Part No.:
- IPD95R2K0P7ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 15 units)*
SGD20.73
(exc. GST)
SGD22.59
(inc. GST)
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In Stock
- Plus 7,365 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | SGD1.382 | SGD20.73 |
| 30 - 75 | SGD1.267 | SGD19.01 |
| 90 - 225 | SGD1.171 | SGD17.57 |
| 240 - 465 | SGD1.087 | SGD16.31 |
| 480 + | SGD1.055 | SGD15.83 |
*price indicative
- RS Stock No.:
- 219-5995
- Mfr. Part No.:
- IPD95R2K0P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-252 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-252 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252
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- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220
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- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-251