Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

RS Stock No.:: 219-5994
Mfr. Part No.:: IPD95R2K0P7ATMA1
Manufacturer:: Infineon

Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1

This image is representative of the product range

Bulk discount available

View bulk pricing options

Subtotal (1 reel of 2500 units)*

SGD1,777.50

(exc. GST)

SGD1,937.50

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
2500 - 2500	SGD0.711	SGD1,777.50
5000 - 5000	SGD0.684	SGD1,710.00
7500 +	SGD0.675	SGD1,687.50

*price indicative

RS Stock No.:: 219-5994
Mfr. Part No.:: IPD95R2K0P7ATMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	950V
	Series	CoolMOS P7
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	37W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 950V
	Series CoolMOS P7
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 37W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 900mV
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Width 6.22mm
	Automotive Standard No

Datasheet - IPD95R2K0P7ATMA1

Infineon CoolMOS P7 Series MOSFET, 950V Drain Source Voltage, 4A Continuous Drain Current - IPD95R2K0P7ATMA1

This MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power conversion in demanding electronic systems. It operates across a wide ambient range and is intended for surface-mounted applications where a compact, thermally capable switching device is required.

Features and Benefits:

• 950V drain-source rating enables high-voltage switching applications
• 2mΩ Rds(on) minimises conduction losses during high-current operation
• 10nC gate charge reduces drive energy and switching-related losses
• 4A continuous drain current supports moderate load currents reliably
• 37W maximum power dissipation allows significant thermal headroom
• 20V gate-source capability accommodates common gate drive voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with industrial motor-drive front-ends
• Can be used for energy conversion in renewable systems
• Suitable for Compact surface-mount power modules

What temperature extremes can it tolerate in operation?

It is rated to operate from −55°C up to 150°C, enabling use in wide thermal envelopes.

How is it packaged for PCB assembly?

It comes in a TO-252 surface-mount package suitable for soldered board mounting.

What forward conduction characteristic is typical when conducting?

The device exhibits a forward voltage of 0.9V during conduction under appropriate conditions.

How many electrical connections does it present for circuit integration?

It provides three pins for standard MOSFET Terminal connections.