Infineon HEXFET Type N-Channel MOSFET, 51 A, 150 V, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

SGD1,550.40

(exc. GST)

SGD1,689.60

(inc. GST)

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Units
Per unit
Per Reel*
800 - 800SGD1.938SGD1,550.40
1600 - 1600SGD1.86SGD1,488.00
2400 +SGD1.812SGD1,449.60

*price indicative

RS Stock No.:
218-3119
Mfr. Part No.:
IRFS52N15DTRLP
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

32mΩ

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

89nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Height

9.65mm

Automotive Standard

No

The Infineon IRFS series single N-channel IR MOSFET. This MOSFET is used in high frequency DC-DC converters, plasma Display Panel etc.

Lead-free

Significant reduction of switching losses

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