Infineon HEXFET Type N-Channel MOSFET, 43 A, 150 V, 3-Pin TO-263 IRF3415STRLPBF
- RS Stock No.:
- 258-8194
- Mfr. Part No.:
- IRF3415STRLPBF
- Manufacturer:
- Infineon
N
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD13.90
(exc. GST)
SGD15.15
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 1,600 unit(s) shipping from 13 August 2026
- Plus 2,400 unit(s) shipping from 20 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD2.78 | SGD13.90 |
| 25 - 45 | SGD2.498 | SGD12.49 |
| 50 - 95 | SGD2.45 | SGD12.25 |
| 100 - 245 | SGD2.008 | SGD10.04 |
| 250 + | SGD1.968 | SGD9.84 |
*price indicative
- RS Stock No.:
- 258-8194
- Mfr. Part No.:
- IRF3415STRLPBF
- Manufacturer:
- Infineon
Specifications
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.042Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | EIA 418 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.042Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals EIA 418 | ||
Automotive Standard No | ||
Related links
- Infineon HEXFET Type N-Channel MOSFET 150 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263