Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF
- RS Stock No.:
- 218-3118
- Mfr. Part No.:
- IRFS3307ZTRRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD30.87
(exc. GST)
SGD33.65
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,370 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD3.087 | SGD30.87 |
| 20 - 90 | SGD2.83 | SGD28.30 |
| 100 - 240 | SGD2.609 | SGD26.09 |
| 250 - 490 | SGD2.422 | SGD24.22 |
| 500 + | SGD2.355 | SGD23.55 |
*price indicative
- RS Stock No.:
- 218-3118
- Mfr. Part No.:
- IRFS3307ZTRRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Maximum Power Dissipation Pd | 230W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Maximum Power Dissipation Pd 230W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.65mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Related links
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IRFS3307ZTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V, 3-Pin TO-263