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Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF

Name: Infineon HEXFET N-Channel MOSFET, 128 A, 75 V, 3-Pin TO-263 IRFS3307ZTRRPBF
Brand: Infineon
SKU: 218-3117
Availability: InStock

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SGD1,760.00

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Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	128A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.8mΩ
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	110nC
	Maximum Operating Temperature	175°C
	Width	4.83mm
	Length	10.67mm
	Height	9.65mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 128A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.8mΩ
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 110nC
	Maximum Operating Temperature 175°C
	Width 4.83mm
	Length 10.67mm
	Height 9.65mm
	Standards/Approvals No
	Automotive Standard No

The Infineon HEXFET series single N-Channel Power MOSFET integrated with D2PAK (TO-263) type package.

Fully Characterized Capacitance and Avalanche SOA

Enhanced body diode dV/dt and dI/dt Capability

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