Infineon HEXFET Type N-Channel MOSFET, 6 A, 500 V, 3-Pin TO-252 IRFR825TRPBF

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Subtotal (1 pack of 15 units)*

SGD30.30

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SGD33.00

(inc. GST)

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Units
Per unit
Per Pack*
15 - 15SGD2.02SGD30.30
30 - 75SGD1.852SGD27.78
90 - 225SGD1.71SGD25.65
240 - 465SGD1.586SGD23.79
480 +SGD1.543SGD23.15

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Packaging Options:
RS Stock No.:
218-3116
Mfr. Part No.:
IRFR825TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

500V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

119W

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.65mm

Length

10.67mm

Width

4.83 mm

Automotive Standard

No

The Infineon HEXFET series single N-channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in UPS, SMPS etc.

Lower gate charge results in simpler drive requirements.

Higher gate voltage threshold offers improved noise immunity.

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