Infineon HEXFET Type N-Channel MOSFET, 6 A, 500 V, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

SGD2,850.00

(exc. GST)

SGD3,106.00

(inc. GST)

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Units
Per unit
Per Reel*
2000 - 2000SGD1.425SGD2,850.00
4000 - 4000SGD1.368SGD2,736.00
6000 +SGD1.332SGD2,664.00

*price indicative

RS Stock No.:
218-3115
Mfr. Part No.:
IRFR825TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.3Ω

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

119W

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

9.65mm

Length

10.67mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET series single N-channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in UPS, SMPS etc.

Lower gate charge results in simpler drive requirements.

Higher gate voltage threshold offers improved noise immunity.

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