Infineon OptiMOS-T2 Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-262 IPI45N06S409AKSA2
- RS Stock No.:
- 218-3063
- Mfr. Part No.:
- IPI45N06S409AKSA2
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
SGD18.38
(exc. GST)
SGD20.03
(inc. GST)
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In Stock
- 490 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.838 | SGD18.38 |
| 20 - 90 | SGD1.685 | SGD16.85 |
| 100 - 240 | SGD1.554 | SGD15.54 |
| 250 - 490 | SGD1.443 | SGD14.43 |
| 500 + | SGD1.403 | SGD14.03 |
*price indicative
- RS Stock No.:
- 218-3063
- Mfr. Part No.:
- IPI45N06S409AKSA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-262 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.4 mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Height | 23.45mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS-T2 | ||
Package Type TO-262 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.4 mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Height 23.45mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel automotive MOSFET integrated with I2PAK (TO-262) type package.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-262
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-262
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-262 IPI80N06S4L07AKSA2
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB45N06S4L08ATMA3
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252