Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V N, 8-Pin TSDSON
- RS Stock No.:
- 218-2985
- Mfr. Part No.:
- BSZ099N06LS5ATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 reel of 5000 units)*
SGD2,370.00
(exc. GST)
SGD2,585.00
(inc. GST)
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- Shipping from 09 June 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | SGD0.474 | SGD2,370.00 |
| 10000 - 10000 | SGD0.455 | SGD2,275.00 |
| 15000 + | SGD0.444 | SGD2,220.00 |
*price indicative
- RS Stock No.:
- 218-2985
- Mfr. Part No.:
- BSZ099N06LS5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.9mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.9mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series N-channel power MOSFET. It is highly suitable for wireless charging, adapter and telecom applications. The devices low gate charge (Q g) reduces switching losses without compromising conduction losses.
100% avalanche tested
Superior thermal resistance
Pb-free lead plating
Related links
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