Infineon OptiMOS 5 Type N-Channel MOSFET, 17 A, 30 V N, 8-Pin TSDSON BSZ0589NSATMA1
- RS Stock No.:
- 218-2984
- Mfr. Part No.:
- BSZ0589NSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD20.38
(exc. GST)
SGD22.22
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 20,000 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD1.019 | SGD20.38 |
| 40 - 80 | SGD0.934 | SGD18.68 |
| 100 - 220 | SGD0.864 | SGD17.28 |
| 240 - 480 | SGD0.802 | SGD16.04 |
| 500 + | SGD0.779 | SGD15.58 |
*price indicative
- RS Stock No.:
- 218-2984
- Mfr. Part No.:
- BSZ0589NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 2.1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 2.1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.1mm | ||
Width 3.4 mm | ||
Automotive Standard No | ||
The Infineon N-Channel Power MOSFET. This MOSFET is optimized for high performance Wireless charger.
Low FOMSW for high frequency SMPS
Very low on-resistance RDS(on) @ VGS=4.5 V
100% avalanche tested
Superior thermal resistance
Related links
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