Infineon Dual N Channel Mosfet HEXFET 2 N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF
- RS Stock No.:
- 217-2603
- Mfr. Part No.:
- IRF7341GTRPBF
- Manufacturer:
- Infineon
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SGD24.00
(exc. GST)
SGD26.20
(inc. GST)
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In Stock
- Plus 60 unit(s) shipping from 05 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.40 | SGD24.00 |
| 20 - 90 | SGD2.26 | SGD22.60 |
| 100 - 240 | SGD2.083 | SGD20.83 |
| 250 - 490 | SGD1.93 | SGD19.30 |
| 500 + | SGD1.851 | SGD18.51 |
*price indicative
- RS Stock No.:
- 217-2603
- Mfr. Part No.:
- IRF7341GTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.4W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual N Channel Mosfet | |
| Maximum Operating Temperature | 175°C | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.4W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual N Channel Mosfet | ||
Maximum Operating Temperature 175°C | ||
Width 4mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
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