Infineon Dual HEXFET 2 Type N-Channel MOSFET, 70 A, 40 V Enhancement, 8-Pin PQFN
- RS Stock No.:
- 229-1739
- Mfr. Part No.:
- AUIRFN8459TR
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 4000 units)*
SGD8,408.00
(exc. GST)
SGD9,164.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 8,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | SGD2.102 | SGD8,408.00 |
| 8000 - 8000 | SGD2.021 | SGD8,084.00 |
| 12000 + | SGD1.995 | SGD7,980.00 |
*price indicative
- RS Stock No.:
- 229-1739
- Mfr. Part No.:
- AUIRFN8459TR
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.85 mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Width 5.85 mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel HEXFET power MOSFET in a PQFN 5 x 6 L package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.
It is RoHS compliant
It has 175°C operating temperature
It has ultra low on resistance
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