Infineon P7 Type N-Channel MOSFET, 9 A, 950 V P, 3-Pin TO-220 IPA95R750P7XKSA1
- RS Stock No.:
- 217-2492
- Mfr. Part No.:
- IPA95R750P7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD27.84
(exc. GST)
SGD30.35
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 410 unit(s) shipping from 19 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.784 | SGD27.84 |
| 20 - 90 | SGD2.551 | SGD25.51 |
| 100 - 240 | SGD2.354 | SGD23.54 |
| 250 - 490 | SGD2.186 | SGD21.86 |
| 500 + | SGD2.125 | SGD21.25 |
*price indicative
- RS Stock No.:
- 217-2492
- Mfr. Part No.:
- IPA95R750P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-220 | |
| Series | P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 15.3nC | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.9 mm | |
| Height | 29.75mm | |
| Length | 10.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-220 | ||
Series P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 15.3nC | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.9 mm | ||
Height 29.75mm | ||
Length 10.65mm | ||
Automotive Standard No | ||
The Infineon latest 950V CoolMOS™ P7 series sets a new bench mark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.
Best-in-class FOMRDS (on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Best-in-class CoolMOS™ quality and reliability
Fully optimized portfolio
Related links
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