Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-220 IPP120N08S403AKSA1
- RS Stock No.:
- 214-9088
- Mfr. Part No.:
- IPP120N08S403AKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD32.11
(exc. GST)
SGD35.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 990 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD6.422 | SGD32.11 |
| 10 - 95 | SGD5.89 | SGD29.45 |
| 100 - 245 | SGD5.432 | SGD27.16 |
| 250 - 495 | SGD5.042 | SGD25.21 |
| 500 + | SGD4.906 | SGD24.53 |
*price indicative
- RS Stock No.:
- 214-9088
- Mfr. Part No.:
- IPP120N08S403AKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS-T2 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 128nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS-T2 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 128nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
The product is AEC Q101 qualified
It has 175°C operating temperature
100% Avalanche tested
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS -T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS-T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263 IPB120N08S404ATMA1
- Infineon OptiMOS -T2 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB120N06S4H1ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB120N06S402ATMA2