Infineon OptiMOS -T2 Type N-Channel MOSFET, 120 A, 80 V Enhancement, 3-Pin TO-263 IPB120N08S403ATMA1

This image is representative of the product range

Bulk discount available
View bulk pricing option

Subtotal (1 pack of 5 units)*

SGD41.60

(exc. GST)

SGD45.35

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 220 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
5 - 5SGD8.32SGD41.60
10 - 95SGD7.63SGD38.15
100 - 245SGD7.044SGD35.22
250 - 495SGD6.542SGD32.71
500 +SGD6.35SGD31.75

*price indicative

Packaging Options:
RS Stock No.:
214-4366
Mfr. Part No.:
IPB120N08S403ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

80V

Package Type

TO-263

Series

OptiMOS -T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

128nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

4.5mm

Standards/Approvals

No

Length

10.02mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS T2 MOSFET is 100% Avalanche tested and is RoHS compliant.

It is AEC Q101 qualified

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy