Infineon OptiMOS Type N-Channel MOSFET, 13 A, 34 V Enhancement, 8-Pin TDSON BSC0996NSATMA1
- RS Stock No.:
- 214-8979
- Mfr. Part No.:
- BSC0996NSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD48.45
(exc. GST)
SGD52.80
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 03 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.969 | SGD48.45 |
| 100 - 100 | SGD0.888 | SGD44.40 |
| 150 - 200 | SGD0.82 | SGD41.00 |
| 250 - 450 | SGD0.761 | SGD38.05 |
| 500 + | SGD0.741 | SGD37.05 |
*price indicative
- RS Stock No.:
- 214-8979
- Mfr. Part No.:
- BSC0996NSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 34V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.2nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Length | 5.49mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 34V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.2nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Length 5.49mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
It comes with Improved switching behaviour
100% Avalanche tested
Related links
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- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TDSON