Infineon OptiMOS-TM7 N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N012ATMA1
- RS Stock No.:
- 349-012
- Mfr. Part No.:
- IAUCN04S7N012ATMA1
- Manufacturer:
- Infineon
Add 100 more to save SGD10.10
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD20.20
(exc. GST)
SGD22.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
- Plus 4,860 unit(s) shipping from 16 November 2026
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 90 | SGD2.02 | SGD20.20 | - |
| 100 - 240 | SGD1.919 | SGD19.19 | SGD10.10 |
| 250 - 490 | SGD1.779 | SGD17.79 | SGD60.25 |
| 500 - 990 | SGD1.636 | SGD16.36 | SGD192.00 |
| 1000 + | SGD1.576 | SGD15.76 | SGD444.00 |
*price indicative
- RS Stock No.:
- 349-012
- Mfr. Part No.:
- IAUCN04S7N012ATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-TDSON-8-34 | |
| Series | OptiMOS-TM7 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.51mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 800mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 105W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-TDSON-8-34 | ||
Series OptiMOS-TM7 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.51mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 800mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 105W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Infineon IAU Series MOSFET, 214A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IAUCN04S7N012ATMA1
Features & Benefits
Applications
What are the benefits of having a Type C tripping characteristic?
What is the significance of the 5kA breaking capacity?
How does the device perform in varying ambient temperatures?
What type of conductors can be connected to the terminals?
Related links
- Infineon OptiMOS-TM7 N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N015ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N034ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7N009ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN04S7L014ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TDSON-8-34 IAUCN08S7N024ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-43 IAUCN04S7N005ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-43 IAUCN04S7N006ATMA1
- Infineon OptiMOS-TM7 N-Channel MOSFET 40 V Enhancement, 8-Pin PG-TDSON-8-33 IAUCN04S7L028ATMA1
