Infineon OptiMOS Type N-Channel MOSFET, 275 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSIATMA1
- RS Stock No.:
- 214-8970
- Mfr. Part No.:
- BSC010N04LSIATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
SGD10.12
(exc. GST)
SGD11.03
(inc. GST)
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In Stock
- 4,050 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD2.024 | SGD10.12 |
| 10 - 95 | SGD1.962 | SGD9.81 |
| 100 - 245 | SGD1.902 | SGD9.51 |
| 250 - 495 | SGD1.844 | SGD9.22 |
| 500 + | SGD1.79 | SGD8.95 |
*price indicative
- RS Stock No.:
- 214-8970
- Mfr. Part No.:
- BSC010N04LSIATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 275A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 139W | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 275A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 139W | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements.
Monolithic integrated Schottky-like diode
Optimized for synchronous rectification
100% avalanche tested
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- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TDSON
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