Infineon OptiMOS-TM5 Type N-Channel MOSFET, 275 A, 60 V Enhancement, 8-Pin PG-TDSON-8 FL ISC025N08NM5LF2ATMA1

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Subtotal (1 pack of 2 units)*

SGD13.90

(exc. GST)

SGD15.16

(inc. GST)

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Units
Per unit
Per Pack*
2 - 18SGD6.95SGD13.90
20 - 198SGD6.255SGD12.51
200 - 998SGD5.775SGD11.55
1000 - 1998SGD5.355SGD10.71
2000 +SGD4.80SGD9.60

*price indicative

RS Stock No.:
348-846
Mfr. Part No.:
ISC025N08NM5LF2ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

275A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TDSON-8 FL

Series

OptiMOS-TM5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.55mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

217W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon 60 V OptiMOS 5 Linear FET in a PQFN 5x6 mm (SuperSO8) package, offering the industry’s lowest on-state resistance RDS(on) and wide safe operating area (SOA) at 25˚C and 125˚C. The OptiMOS Linear FET is a revolutionary approach that solves the trade off between on-state resistance and linear mode capability.

High inrush current enabled

Fast start up and shorter down time

Industry standard footprint

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