Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1

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Subtotal (1 pack of 5 units)*

SGD33.71

(exc. GST)

SGD36.745

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD6.742SGD33.71
10 - 95SGD6.348SGD31.74
100 - 245SGD5.846SGD29.23
250 - 495SGD5.418SGD27.09
500 +SGD5.192SGD25.96

*price indicative

Packaging Options:
RS Stock No.:
214-4414
Mfr. Part No.:
IPP60R060P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

67nC

Maximum Power Dissipation Pd

164W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.2mm

Height

4.4mm

Standards/Approvals

No

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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