Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 214-4413
- Mfr. Part No.:
- IPP60R060P7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD227.95
(exc. GST)
SGD248.45
(inc. GST)
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- Shipping from 06 October 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD4.559 | SGD227.95 |
| 150 - 200 | SGD4.487 | SGD224.35 |
| 250 - 450 | SGD4.369 | SGD218.45 |
| 500 - 950 | SGD4.139 | SGD206.95 |
| 1000 + | SGD3.703 | SGD185.15 |
*price indicative
- RS Stock No.:
- 214-4413
- Mfr. Part No.:
- IPP60R060P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 164W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.4mm | |
| Width | 15.93 mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 164W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.4mm | ||
Width 15.93 mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
Related links
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- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon 600V CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
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