Infineon 600V CoolMOS P7 N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1

RS Stock No.:: 214-4413
Mfr. Part No.:: IPP60R060P7XKSA1
Manufacturer:: Infineon

Infineon 600V CoolMOS P7 N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-220 IPP60R060P7XKSA1

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Subtotal (1 tube of 50 units)*

SGD261.60

(exc. GST)

SGD285.15

(inc. GST)

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Units	Per unit	Per Tube*
50 - 100	SGD5.232	SGD261.60
150 - 200	SGD5.149	SGD257.45
250 - 450	SGD5.014	SGD250.70
500 - 950	SGD4.75	SGD237.50
1000 +	SGD4.25	SGD212.50

*price indicative

RS Stock No.:: 214-4413
Mfr. Part No.:: IPP60R060P7XKSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	48A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	600V CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	67nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	164W
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	150°C
	Width	15.93mm
	Standards/Approvals	No
	Height	4.4mm
	Length	10.2mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 48A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series 600V CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 67nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 164W
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 900mV
	Maximum Operating Temperature 150°C
	Width 15.93mm
	Standards/Approvals No
	Height 4.4mm
	Length 10.2mm
	Automotive Standard No

Datasheet - IPP60R060P7XKSA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - IPP60R060P7XKSA1

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching applications. It operates across a wide temperature span and is intended for through-hole mounting in a TO-220 format, providing a compact, serviceable option for engineers needing a robust device for high-voltage circuits.

Features and Benefits:

• 600V rating enabling high-voltage switching applications
• 48A continuous drain current supporting heavy load handling
• 164W maximum power dissipation for high-power operation
• 60 mΩ maximum RDS(on) delivering low conduction losses
• 67 nC typical gate charge allowing predictable drive requirements
• 20V maximum gate-source voltage accommodating standard gate drivers

Applications

• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter stages
• Used with high-voltage battery management systems
• Can be used for power-factor correction pre-regulators
• Useful in LED lighting mains-supply conversion

What thermal range can it tolerate during operation?

It is specified to operate from -55 °C up to 150 °C, covering harsh ambient and elevated junction conditions for demanding environments.

What package and mounting method are provided for board assembly?

It is supplied in a TO-220 package designed for through-hole installation, facilitating heatsinking and straightforward soldered mounting.

How does the device’s gate drive requirement affect driver selection?

With a typical gate charge of 67 nC and a 20V VGS limit, choose a driver capable of sourcing and sinking sufficient current while not exceeding the gate-voltage limit.

Which conduction and switching characteristics influence efficiency?

The maximum drain-source resistance of 60 mΩ and forward voltage of 0.9V indicate its conduction losses and forward drop characteristics under load, relevant when calculating system efficiency.