Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1

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Subtotal (1 pack of 10 units)*

SGD22.15

(exc. GST)

SGD24.14

(inc. GST)

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  • 19,620 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 10SGD2.215SGD22.15
20 - 90SGD2.032SGD20.32
100 - 240SGD1.877SGD18.77
250 - 490SGD1.741SGD17.41
500 +SGD1.694SGD16.94

*price indicative

Packaging Options:
RS Stock No.:
214-4390
Mfr. Part No.:
IPD70N12S311ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS-T

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.35mm

Length

6.65mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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