Infineon OptiMOS-T Type N-Channel MOSFET, 70 A, 120 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

SGD3,535.00

(exc. GST)

SGD3,852.50

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500SGD1.414SGD3,535.00
5000 - 5000SGD1.36SGD3,400.00
7500 +SGD1.342SGD3,355.00

*price indicative

RS Stock No.:
214-4389
Mfr. Part No.:
IPD70N12S311ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS-T

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.35mm

Width

6.42 mm

Length

6.65mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET is suitable for automotive applications and it is 100% Avalanche tested.

It is Halogen-free according to IEC61249-2-21

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