Infineon OptiMOS 5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1

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Subtotal (1 pack of 2 units)*

SGD15.71

(exc. GST)

SGD17.124

(inc. GST)

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  • 42 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8SGD7.855SGD15.71
10 - 98SGD7.205SGD14.41
100 - 248SGD6.65SGD13.30
250 - 498SGD6.17SGD12.34
500 +SGD6.00SGD12.00

*price indicative

Packaging Options:
RS Stock No.:
214-4347
Mfr. Part No.:
IAUT300N10S5N015ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

100V

Package Type

HSOF

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

166nC

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon OptiMOS MOSFET offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

It is ideal for hot-swap and e-fuse applications

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