Infineon OptiMOS 3 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IPT020N10N3ATMA1
- RS Stock No.:
- 906-4356
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD21.07
(exc. GST)
SGD22.966
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,602 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD10.535 | SGD21.07 |
| 10 - 48 | SGD10.31 | SGD20.62 |
| 50 - 98 | SGD10.005 | SGD20.01 |
| 100 - 248 | SGD9.69 | SGD19.38 |
| 250 + | SGD9.40 | SGD18.80 |
*price indicative
- RS Stock No.:
- 906-4356
- Mfr. Part No.:
- IPT020N10N3ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOF | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 156nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.58mm | |
| Height | 2.4mm | |
| Width | 10.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOF | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 156nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.58mm | ||
Height 2.4mm | ||
Width 10.1 mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin HSOF IAUT300N10S5N015ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 3 Type N-Channel MOSFET 200 V Enhancement, 8-Pin HSOF IPT111N20NFDATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF IPT007N06NATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF