Infineon OptiMOS 3 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 8-Pin HSOF IPT020N10N3ATMA1

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Subtotal (1 pack of 2 units)*

SGD21.07

(exc. GST)

SGD22.966

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD10.535SGD21.07
10 - 48SGD10.31SGD20.62
50 - 98SGD10.005SGD20.01
100 - 248SGD9.69SGD19.38
250 +SGD9.40SGD18.80

*price indicative

Packaging Options:
RS Stock No.:
906-4356
Mfr. Part No.:
IPT020N10N3ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

156nC

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.58mm

Height

2.4mm

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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