Vishay SQJA66EP_RC Type N-Channel MOSFET, 75 A, 60 V Enhancement, 4-Pin SO-8 SQJA66EP-T1_GE3
- RS Stock No.:
- 210-5051
- Mfr. Part No.:
- SQJA66EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD16.32
(exc. GST)
SGD17.79
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 24 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.632 | SGD16.32 |
| 20 - 90 | SGD1.551 | SGD15.51 |
| 100 - 490 | SGD1.474 | SGD14.74 |
| 500 - 990 | SGD1.40 | SGD14.00 |
| 1000 + | SGD1.33 | SGD13.30 |
*price indicative
- RS Stock No.:
- 210-5051
- Mfr. Part No.:
- SQJA66EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJA66EP_RC | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 6.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 64.9nC | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJA66EP_RC | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 6.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 64.9nC | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay N channel MOSFET has PowerPAK SO-8L package type.
R-C values for the electrical circuit in the foster/tank and cauer/filter configurations are included
Related links
- Vishay SQJA66EP_RC Type N-Channel MOSFET 60 V Enhancement, 4-Pin SO-8
- Vishay SQJ146EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJ146EP-T1_GE3
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V Single, 4-Pin PowerPAK (8x8L) SQJ164ELP-T1_GE3
- Vishay Siliconix TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJA76EP-T1_GE3
- Vishay SQJ146EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay N-Channel 60 V Type N-Channel MOSFET 60 V Single, 4-Pin PowerPAK (8x8L)
- Vishay SQJB46EP_RC Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJB46EP-T1_GE3
- Vishay SQJ162EP Type N-Channel MOSFET 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3