Vishay SQJ162EP Type N-Channel MOSFET, 166 A, 60 V Enhancement, 4-Pin SO-8L SQJ162EP-T1_GE3
- RS Stock No.:
- 280-0019
- Mfr. Part No.:
- SQJ162EP-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD11.47
(exc. GST)
SGD12.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 31 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.294 | SGD11.47 |
| 50 - 95 | SGD1.896 | SGD9.48 |
| 100 - 245 | SGD1.686 | SGD8.43 |
| 250 - 995 | SGD1.654 | SGD8.27 |
| 1000 + | SGD1.62 | SGD8.10 |
*price indicative
- RS Stock No.:
- 280-0019
- Mfr. Part No.:
- SQJ162EP-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 166A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJ162EP | |
| Package Type | SO-8L | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 166A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJ162EP | ||
Package Type SO-8L | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
AEC-Q101 qualified
Fully lead (Pb)-free device
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